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STPS1045BTRL データシート(PDF) 2 Page - Vishay Siliconix |
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STPS1045BTRL データシート(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94323 2 Revision: 23-Apr-08 STPS1045BPbF Vishay High Power Products Schottky Rectifier, 10 A Note (1) Pulse width < 300 µs, duty cycle < 2 % Note (1) thermal runaway condition for a diode on its own heatsink ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop See fig. 1 VFM (1) 10 A TJ = 25 °C 0.63 V 20 A 0.84 10 A TJ = 125 °C 0.57 20 A 0.72 Maximum reverse leakage current See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR 0.2 mA TJ = 125 °C 15 Typical junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 760 pF Typical series inductance LS Measured lead to lead 5 mm from package body 5.0 nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ (1), TStg - 40 to 175 °C Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 3.0 °C/W Maximum thermal resistance, junction to ambient RthJA 50 Approximate weight 0.3 g 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) STPS1045B dP tot dT J ------------- 1 R thJA -------------- < |
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同様の説明 - STPS1045BTRL |
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