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2PB709ASL データシート(PDF) 3 Page - NXP Semiconductors

部品番号 2PB709ASL
部品情報  45 V, 100 mA PNP general-purpose transistors
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メーカー  NXP [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo NXP - NXP Semiconductors

2PB709ASL データシート(HTML) 3 Page - NXP Semiconductors

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2PB709AXL_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2008
3 of 9
NXP Semiconductors
2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7.
Characteristics
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−45
V
VCEO
collector-emitter voltage
open base
-
−45
V
VEBO
emitter-base voltage
open collector
-
−6V
IC
collector current
-
−100
mA
ICM
peak collector current
single pulse;
tp ≤ 1ms
-
−200
mA
IBM
peak base current
single pulse;
tp ≤ 1ms
-
−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
250
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
[1] -
-
500
K/W
Table 8.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −45 V; IE =0A
-
-
−10
nA
VCB = −45 V; IE =0A;
Tj = 150 °C
--
−5
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC =0A
-
-
−10
nA
hFE
DC current gain
VCE = −10 V; IC = −2mA
hFE group R
210
-
340
hFE group S
290
-
460
VCEsat
collector-emitter
saturation voltage
IC = −100 mA;
IB = −10 mA
[1] --
−500 mV


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