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2PB709ASL データシート(PDF) 3 Page - NXP Semiconductors |
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2PB709ASL データシート(HTML) 3 Page - NXP Semiconductors |
3 / 9 page 2PB709AXL_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 12 November 2008 3 of 9 NXP Semiconductors 2PB709ARL; 2PB709ASL 45 V, 100 mA PNP general-purpose transistors 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −45 V VCEO collector-emitter voltage open base - −45 V VEBO emitter-base voltage open collector - −6V IC collector current - −100 mA ICM peak collector current single pulse; tp ≤ 1ms - −200 mA IBM peak base current single pulse; tp ≤ 1ms - −100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 500 K/W Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −45 V; IE =0A - - −10 nA VCB = −45 V; IE =0A; Tj = 150 °C -- −5 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −10 nA hFE DC current gain VCE = −10 V; IC = −2mA hFE group R 210 - 340 hFE group S 290 - 460 VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −10 mA [1] -- −500 mV |
同様の部品番号 - 2PB709ASL |
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