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STB80NF55-08 データシート(PDF) 4 Page - STMicroelectronics |
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STB80NF55-08 データシート(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STP80NF55-08 - STB80NF55-08 - STW80NF55-08 4/15 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS = 0 55 V IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating@125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A 0.0065 0.008 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =15 V , ID = 18 A 40 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS= 0 3740 830 265 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 27 V, ID = 80 A VGS =10 V (see Figure 14) 112 20 40 155 nC nC nC |
同様の部品番号 - STB80NF55-08 |
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同様の説明 - STB80NF55-08 |
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