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2SA1468 データシート(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1468 データシート(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Transistors 1 www.kexin.com.cn 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Silicon PNP Epitaxial 2SA1468 Features High voltage amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -180 V Collector to emitter voltage VCEO -180 V Emitter to base voltage VEBO -5 V Collector current IC -100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55to+150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC =-10 ìA, IE = 0 -180 V Collector to emitter breakdown voltage V(BR)CEO IC =-0.5mA, RBE = -180 V Emitter to base breakdown voltage V(BR)EBO IE =-10 ìA, IC =0 -5 V DC current transfer ratio hFE VCE =-12 V,IC = -2 mA 100 320 Collector to emitter saturation voltage VCE(sat) IC =-30 mA,IB =-3mA -0.5 V Base emitter voltage VBE VCE =-12 V, IC =-2mA -1 V Gain bandwidth product fT VCE =-12 V,IC = -10 mA 200 MHz Collector output capacitance Cob VCB =-10 V, IE =0,f =1MHz 3.5 pF hFE Classification Marking INB INC Rank B C hFE 100 200 160 320 |
同様の部品番号 - 2SA1468 |
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同様の説明 - 2SA1468 |
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