データシートサーチシステム |
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BF820W データシート(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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BF820W データシート(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Transistors 1 www.kexin.com.cn 1 Emitter 2 Base 3 Collector NPN High-Voltage Transistor BF820W Features Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 300 V Collector-emitter voltage (open base) VCEO 300 V Emitter-base voltage (open collector) VEBO 5V Collector current IC 50 mA Peak collector current ICM 100 mA Peak base current IBM 50 mA Total power dissipation * Tamb 25 Ptot 200 mW Storage temperature Tstg -65to+150 Junction temperature Tj 150 Operating ambient temperature Ramb -65to+150 Thermal resistance from junction to ambient * Rth j-a 625 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0; VCB = 200 V 10 nA IE =0; VCB = 200 V; Tj = 150 10 ìA Emitter cutoff current IEBO IC =0; VEB =5V 50 nA DC current gain hFE IC =25mA; VCE =20V 50 Collector-emitter saturation voltage * VCEsat IC =30mA; IB = 5 mA 600 mV Feedback capacitance Cre IC =0; VCB =30V; f = 1MHz 1.6 pF Transition frequency fT IC =10mA; VCE = 10 V; f=100MHz 60 MHz * Pulse test: tp 300 ìs; ä 0.02. Collector cutoff current ICBO Marking Marking 1V |
同様の部品番号 - BF820W |
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同様の説明 - BF820W |
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