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TC660CPA データシート(PDF) 2 Page - TelCom Semiconductor, Inc |
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TC660CPA データシート(HTML) 2 Page - TelCom Semiconductor, Inc |
2 / 8 page 4-6 TELCOM SEMICONDUCTOR, INC. ELECTRICAL CHARACTERISTICS: Specifications Measured Over Operating Temperature Range With, V+ = 5V, COSC = Open, C1, C2 = 150µF, FC = Open, Test Circuit (Figure 1), unless otherwise indicated. Symbol Parameter Test Conditions Min Typ Max Unit I+ Supply Current RL = ∞ FC pin = OPEN or GND — 200 500 µA FC pin = V+ —1 3 mA V+ Supply Voltage Range LV = HIGH, RL = 1 kΩ 3 — 5.5 V LV = GND, RL = 1 kΩ 1.5 — 5.5 LV = OUT, RL = 1 kΩ (Figure 9) 2.5 — 5.5 ROUT Output Source Resistance IOUT = 100mA — 6.5 10 Ω IOUT Output Current VOUT < – 4V 100 — — mA FOSC Oscillator Frequency Pin 7 open; Pin 1 open or GND — 10 — kHz Pin 1 = V+ —90— IOSC Input Current Pin 1 open — +1.1 — µA Pin 1 = V+ — +5— PEFF Power Efficiency (Note 4) RL = 1 kΩ connected between V+ & VOUT 96 98 — % RL = 500Ω connected between VOUT & GND 92 96 — IL = 100mA to GND — 88 — VOUT EFF Voltage Conversion Efficiency RL = ∞ 99 99.9 — % NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no inputs from sources operating from external supplies be applied prior to "power up" of the TC660. 2. Derate linearly above 50 °C by 5.5 mW/°C. 3. To prevent damaging the device, do not short VOUT to V+. 4. To maximize output voltage and efficiency performance, use low ESR capacitors for C1 and C2. ABSOLUTE MAXIMUM RATINGS* Supply Voltage ........................................................... +6V LV, FC, OSC Input Voltage (Note 1) ....................... VOUT – 0.3V to (V+ +0.3V) Current Into LV (Note 1) ...................... 20 µA for V+ >3.5V Output Short Duration (VSUPPLY ≤ 5.5V) (Note 3) .. 10 Sec Power Dissipation (Note 2) (TA ≤ 70°C) SOIC ............................................................... 470mW Plastic DIP ...................................................... 730mW Operating Temperature Range C Suffix .................................................. 0 °C to +70°C E Suffix ............................................. – 40 °C to +85°C Storage Temperature Range ................ – 65 °C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300 °C *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TC660 100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER |
同様の部品番号 - TC660CPA |
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同様の説明 - TC660CPA |
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