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TC835CBU データシート(PDF) 2 Page - TelCom Semiconductor, Inc

部品番号 TC835CBU
部品情報  PERSONAL COMPUTER DATA ACQUISITION A/D CONVERTER
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メーカー  TELCOM [TelCom Semiconductor, Inc]
ホームページ  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TC835CBU データシート(HTML) 2 Page - TelCom Semiconductor, Inc

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TELCOM SEMICONDUCTOR, INC.
PERSONAL COMPUTER
DATA ACQUISITION A/D CONVERTER
TC835
ABSOLUTE MAXIMUM RATINGS* (Note 1)
Positive Supply Voltage ............................................. +6V
Negative Supply Voltage ............................................ - 9V
Analog Input Voltage (Pin 9 or 10) ........ V+ to V(Note 2)
Reference Input Voltage (Pin 2) .......................... V+ to V
Clock Input Voltage ............................................. 0V to V+
Operating Temperature Range .................... 0
°C to +70°C
Storage Temperature Range ................ – 65
°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300
°C
NOTES:
1. Functional operation is not implied.
2. Limit input current to under 100
µA if input voltages exceed supply
voltage.
3. Full-scale voltage = 2V.
4. VIN = 0V.
5. 0
°C ≤ TA ≤ +70°C.
6. External reference temperature coefficient less than 0.01 ppm/
°C.
7. – 2V
≤ VIN ≤ +2V. Error of reading from best fit straight
line.
8. |VIN| = 1.9959.
9. Test circuit shown in Figure 1.
10. Specification related to clock frequency range over which
the TC835 correctly performs its various functions.
Increased errors result at higher operating frequencies.
ELECTRICAL CHARACTERISTICS: TA = +25°C, fCLOCK = 200 kHz, V+ = +5V, V= – 5V, unless otherwise specified.
Symbol Parameter
Test Conditions
Min
Typ
Max
Unit
Analog
Display Reading With
Notes 3 and 4
–0.0000
±0.0000
+0.0000
Display
Zero Volt Input
Reading
TCZ
Zero Reading
VIN = 0V
0.5
2
µV/°C
Temperature Coefficient
Note 5
TCFS
Full-Scale
VIN = 2V
5
ppm/
°C
Temperature Coefficient
Notes 5 and 6
NL
Nonlinearity Error
Note 7
0.5
1
Count
DNL
Differential Linearity Error
Note 7
0.01
LSB
Display Reading in
VIN = VREF
+0.9996
+0.9998
+1.0000
Display
Ratiometric Operation
Note 3
Reading
±FSE
± Full-Scale Symmetry
–VIN = +VIN
0.5
1
Count
Error (Roll-Over Error)
Note 8
IIN
Input Leakage Current
Note 4
1
10
pA
eN
Noise
Peak-to-Peak Value Not Exceeded 95% of Time
—15
µVP-P
Digital
IIL
Input Low Current
VIN = 0V
10
100
µA
IIH
Input High Current
VIN = +5V
0.08
10
µA
VOL
Output Low Voltage
IOL = 1.6 mA
0.2
0.4
V
VOH
Output High Voltage
B1, B2, B4, B8, D1–D5
IOH = 1 mA
2.4
4.4
5
V
Busy, Polarity, Overrange, IOH = 10 µA
4.9
4.99
5
V
Underrange, Strobe
fCLK
Clock Frequency
Note 10
0
200
1200
kHz
Power Supply
V+
Positive Supply Voltage
4
5
6
V
V
Negative Supply Voltage
– 3
– 5
– 8
V
I+
Positive Supply Current
fCLK = 0 Hz
1
3
mA
I
Negative Supply Current
fCLK = 0 Hz
0.7
3
mA
PD
Power Dissipation
fCLK = 0 Hz
8.5
30
mW
Package Power Dissipation (TA ≤ 70°C)
28-Pin Plastic DIP ............................................. 1.14W
44-Pin PQFP .................................................... 1.00W
64-Pin PFP ....................................................... 1.14W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.


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