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TC835CBU データシート(PDF) 2 Page - TelCom Semiconductor, Inc |
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TC835CBU データシート(HTML) 2 Page - TelCom Semiconductor, Inc |
2 / 12 page 3-66 TELCOM SEMICONDUCTOR, INC. PERSONAL COMPUTER DATA ACQUISITION A/D CONVERTER TC835 ABSOLUTE MAXIMUM RATINGS* (Note 1) Positive Supply Voltage ............................................. +6V Negative Supply Voltage ............................................ - 9V Analog Input Voltage (Pin 9 or 10) ........ V+ to V– (Note 2) Reference Input Voltage (Pin 2) .......................... V+ to V– Clock Input Voltage ............................................. 0V to V+ Operating Temperature Range .................... 0 °C to +70°C Storage Temperature Range ................ – 65 °C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300 °C NOTES: 1. Functional operation is not implied. 2. Limit input current to under 100 µA if input voltages exceed supply voltage. 3. Full-scale voltage = 2V. 4. VIN = 0V. 5. 0 °C ≤ TA ≤ +70°C. 6. External reference temperature coefficient less than 0.01 ppm/ °C. 7. – 2V ≤ VIN ≤ +2V. Error of reading from best fit straight line. 8. |VIN| = 1.9959. 9. Test circuit shown in Figure 1. 10. Specification related to clock frequency range over which the TC835 correctly performs its various functions. Increased errors result at higher operating frequencies. ELECTRICAL CHARACTERISTICS: TA = +25°C, fCLOCK = 200 kHz, V+ = +5V, V– = – 5V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Analog Display Reading With Notes 3 and 4 –0.0000 ±0.0000 +0.0000 Display Zero Volt Input Reading TCZ Zero Reading VIN = 0V — 0.5 2 µV/°C Temperature Coefficient Note 5 TCFS Full-Scale VIN = 2V — — 5 ppm/ °C Temperature Coefficient Notes 5 and 6 NL Nonlinearity Error Note 7 — 0.5 1 Count DNL Differential Linearity Error Note 7 — 0.01 — LSB Display Reading in VIN = VREF +0.9996 +0.9998 +1.0000 Display Ratiometric Operation Note 3 Reading ±FSE ± Full-Scale Symmetry –VIN = +VIN — 0.5 1 Count Error (Roll-Over Error) Note 8 IIN Input Leakage Current Note 4 — 1 10 pA eN Noise Peak-to-Peak Value Not Exceeded 95% of Time —15 — µVP-P Digital IIL Input Low Current VIN = 0V — 10 100 µA IIH Input High Current VIN = +5V — 0.08 10 µA VOL Output Low Voltage IOL = 1.6 mA — 0.2 0.4 V VOH Output High Voltage B1, B2, B4, B8, D1–D5 IOH = 1 mA 2.4 4.4 5 V Busy, Polarity, Overrange, IOH = 10 µA 4.9 4.99 5 V Underrange, Strobe fCLK Clock Frequency Note 10 0 200 1200 kHz Power Supply V+ Positive Supply Voltage 4 5 6 V V– Negative Supply Voltage – 3 – 5 – 8 V I+ Positive Supply Current fCLK = 0 Hz — 1 3 mA I– Negative Supply Current fCLK = 0 Hz — 0.7 3 mA PD Power Dissipation fCLK = 0 Hz — 8.5 30 mW Package Power Dissipation (TA ≤ 70°C) 28-Pin Plastic DIP ............................................. 1.14W 44-Pin PQFP .................................................... 1.00W 64-Pin PFP ....................................................... 1.14W *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. |
同様の部品番号 - TC835CBU |
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同様の説明 - TC835CBU |
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