2SC3645 datasheet(1/3 Pages) KEXIN

部品番号	2SC3645

部品情報	High-Voltage Switching Applications

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メーカー	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

Transistors

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Features

Adoption of FBET Process

High Breakdown Voltage (VCEO =160V)

Excellent Linearlity of hFE and Small Cob

Fast Switching Speed

High-Voltage Switching Applications

2SC3645

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-Base Voltage

VCBO

180

V

Collector-Emitter Voltage

VCEO

160

V

Emitter-Base Voltage

VEBO

5V

Collector Current

IC

140

mA

Collector Current (Pulse)

ICP

200

mA

PC

500

mW

PC*

1.3

W

Jumction temperature

Tj

150

Storage temperature Range

Tstg

-55to+150

* Mounted on ceramic board (250 mm

2 x 0.8 mm)

Collector Power Dissipation

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector Cut-off Current

ICBO

VCB = 80V , IE = 0

100

nA

Emitter Cut-off Current

IEBO

VEB =4V , IC = 0

100

nA

DC Current Gain

hFE

VCE =5V , IC = 10mA

100

400

Collector-Emitter Saturation Voltage

VCE(sat) IC = 50mA , IB = 5mA

0.14

0.4

V

Gain-Bandwidth Product

fT

VCE = 10V , IC = 10mA

150

MHz

Collector Output Capacitance

Cob

VCB = 10V , IE = 0 ,f= 1MHz

4

pF

Turn-On Time

ton

0.1

Storage Time

tstg

1.5

Fall Time

tf

0.1

ìs

See Test Circuit.

同様の部品番号 - 2SC3645

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Sanyo Semicon Device	2SC3645	108Kb / 4P	High-Voltage Switching, Predriver Applications
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