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BSS80 データシート(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

部品番号 BSS80
部品情報  PNP Silicon Switching Transistors
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メーカー  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
ホームページ  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

BSS80 データシート(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
IC
SMD Type
Transistors
BSS80,BSS82
hFE Classification
TYPE
Rank
B
C
Marking
CHs
CJs
TYPE
Rank
B
C
Marking
CLs
CMs
BSS80
BSS82
Electrical Characteristics Ta = 25
Symbol
Testconditons
Min
Typ
Max
Unit
BSS80
40
BSS82
60
Collector-base breakdown voltage
V(BR)CBO IC =10ìA, IE =0
60
V
V(BR)EBO IE =10ìA, IC =0
5
V
VCB =50V, IE = 0
10
nA
VCB =50V, IE =0, TA = 150
10
ìA
IEBO
VEB =3V, IC = 0
10
nA
BSS80/82B
40
BSS80/82C
75
BSS80/82B
40
BSS80/82C
100
BSS80/82B
40
BSS80/82C
100
BSS80/82B
40
120
BSS80/82C
100
300
BSS80/82B
40
BSS80/82C
50
IC = 150 mA, IB =15mA
0.4
IC = 500 mA, IB =50mA
1.6
IC = 150 mA, IB =15mA
1.3
IC = 500 mA, IB =50mA
2.6
fT
IC =20mA, VCE = 20 V, f = 100 MHz
250
MHz
Ccb
VCB =10V, f = 1MHz
6
pF
td
VCC =30V, IC = 150 mA, IB1 =15mA,VBE(off)
=0.5 V
10
ns
tr
VCC =30V, IC = 150 mA, IB1 =15mA,VBE(off)
=0.5 V
40
ns
tstg
VCC =30V, IC = 150 mA, IB1 =IB2 = 15 mA,
80
ns
tf
VCC =30V, IC = 150 mA, IB1 =IB2 = 15 mA,
30
ns
* Pulse test: t
300ìs, D = 2%.
IC = 100 ìA, VCE =10V
IC =1mA, VCE =10V
IC =10mA, VCE =10V
DC current gain *
hFE
IC = 500 mA, VCE =10V
Rise time
Storage time
Fall time
Delay time
Emitter-base breakdown voltage
ICBO
Collector cutoff current
Base-emitter saturation voltage
*
VBE(sat)
Emitter cutoff current
Transition frequency
Collector-base capacitance
IC = 150 mA, VCE =10V
Collector-emitter saturation voltage *
VCE(sat)
V
V(BR)CEO IC =10mA, IB =0
V
Parameter
Collector-emitter breakdown
voltage


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