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2SD1950 データシート(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1950 データシート(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Transistors 1 www.kexin.com.cn NPN Silicon Epitaxia 2SD1950 Features High dc current gain and good hFE. Low collector saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 15 V Collector current IC 2A Collector current (Pulse) * IC 3A Total power dissipation PT 2W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *PW 10ms, duty cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB =30V, IE = 0 100 nA Emitter cutoff current IEBO VEB =10V, IC = 0 100 nA VCE =5.0 V, IC = 1.0 A 800 1500 3200 VCE =5.0 V, IC = 2.0 A 400 Collector saturation voltage VCE(sat) IC =1A, IB = 10 mA 0.18 0.3 V Base saturation voltage VBE(sat) IC =1A, IB = 10 mA 0.83 1.2 V Base to emitter voltage * VBE VCE =5.0 V, IC = 300 mA 600 660 700 mV Gain bandwidth product fT VCE =10V, IE = -500 mA 150 350 MHz Output capacitance Cob VCB =10V, IE = 0 , f = 1.0 MHz 26 35 pF * Pulsed: PW 350 ìs, duty cycle 2% DC current gain * hFE hFE Classification Marking VM VL VK hFE 800 1600 1200 2400 2000 3200 |
同様の部品番号 - 2SD1950 |
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同様の説明 - 2SD1950 |
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