2SD1950 datasheet(1/1 Pages) KEXIN

部品番号	2SD1950

部品情報	NPN Silicon Epitaxia

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メーカー	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

Transistors

1

www.kexin.com.cn

NPN Silicon Epitaxia

2SD1950

Features

High dc current gain and good hFE.

Low collector saturation voltage.

High VEBO.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

30

V

Collector-emitter voltage

VCEO

25

V

Emitter-base voltage

VEBO

15

V

Collector current

IC

2A

Collector current (Pulse) *

IC

3A

Total power dissipation

PT

2W

Junction temperature

Tj

150

Storage temperature

Tstg

-55 to +150

*PW

10ms, duty cycle

50%

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB =30V, IE = 0

100

nA

Emitter cutoff current

IEBO

VEB =10V, IC = 0

100

nA

VCE =5.0 V, IC = 1.0 A

800

1500

3200

VCE =5.0 V, IC = 2.0 A

400

Collector saturation voltage

VCE(sat) IC =1A, IB = 10 mA

0.18

0.3

V

Base saturation voltage

VBE(sat) IC =1A, IB = 10 mA

0.83

1.2

V

Base to emitter voltage *

VBE

VCE =5.0 V, IC = 300 mA

600

660

700

mV

Gain bandwidth product

fT

VCE =10V, IE = -500 mA

150

350

MHz

Output capacitance

Cob

VCB =10V, IE = 0 , f = 1.0 MHz

26

35

pF

* Pulsed: PW

350 ìs, duty cycle

2%

DC current gain *

hFE

hFE Classification

Marking

VM

VL

VK

hFE

800

1600

1200

2400

2000

3200

同様の部品番号 - 2SD1950

メーカー	部品番号	データシート	部品情報
NEC	2SD1950	255Kb / 4P	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Technology Corp	2SD1950	1Mb / 6P	Old Company Name in Catalogs and Other Documents
	2SD1950-T1-AZ	1Mb / 6P	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
	2SD1950	1Mb / 6P	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

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