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データシートサーチシステム |
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2PB1219AR データシート(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2PB1219AR データシート(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page  www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO IE =0; VCB = -20 V -100 nA IE =0; VCB =-20 V; Tj = 150 -5 ìA Emitter cut-off current IEBO IC =0; VEB = -4 V -100 nA DC current gain 2PB1219AQ 2PB1219AR 2PB1219AS hFE IC = -150 mA; VCE =-10 V; * 85 120 170 170 240 340 Collector-emitter saturation voltage VCE(sat) IC = -300 mA; IB = -30 mA; * -600 mV Base-emitter saturation voltage VBE(sat) IC = -300 mA; IB =-30 mA; * -1.5 V Collector capacitance Cc IE =ie=0; VCB = -10 V; f = 1 MHz 15 pF Transition frequency 2PB1219AQ 2PB1219AR 2PB1219AS fT IC =50mA; VCE = -10 V;f = 100 MHz;* 100 120 140 MHz * Pulse test: tp 300 ìs; ä 0.02. hFE Classification TYPE 2PB1219AQ 2PB1219AR 2PB1219AS Marking DQ DR DS 2PB1219A |
同様の部品番号 - 2PB1219AR |
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同様の説明 - 2PB1219AR |
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