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BA479 データシート(PDF) 1 Page - Vishay Siliconix

部品番号 BA479
部品情報  Silicon PIN Diodes
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BA479 データシート(HTML) 1 Page - Vishay Siliconix

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BA479G.BA479S
Vishay Telefunken
Rev. 2, 01-Apr-99
1 (3)
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 85527
Silicon PIN Diodes
Features
D Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable
attenuators
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
VR
30
V
Forward current
IF
50
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
–55...+125
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=4mm, TL=constant
RthJA
350
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
IF=20mA
VF
1
V
Reverse current
VR=30 V
IR
50
nA
Diode capacitance
f=100MHz, VR=0
CD
0.5
pF
Differential forward
resistance
f=100MHz, IF=1.5mA
rf
50
W
Reverse impedance
f=100MHz, VR=0
BA479G
zr
5
k
W
R
BA479S
zr
9
k
W
Minority carrier
lifetime
IF=10mA, IR=10mA
t
4
ms


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