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データシートサーチシステム |
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データシートサーチシステム |
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KDS3601 データシート(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDS3601 データシート(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  SMD Type IC www.kexin.com.cn 1 SMD Type IC 100V Dual N-Channel PowerTrench MOSFET KDS3601 Features 1.3 A, 100 V. RDS(ON) = 480m @VGS =10V RDS(ON) = 530m @VGS =6V Low gate charge (3.7 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGS 20 V Drain Current Continuous (Note 1a) 1.3 A Drain Current Pulsed 6 A Power Dissipation for Dual Operation PD 2 Power Dissipation for Single Operation (Note 1a) 1.6 Power Dissipation for Single Operation (Note 1b) 1 Power Dissipation for Single Operation (Note 1c) 0.9 Operating and Storage Temperature TJ,TSTG -55to175 Thermal Resistance Junction to Case (Note 1) R JC 40 /W Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W ID PD W |
同様の部品番号 - KDS3601 |
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同様の説明 - KDS3601 |
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