SI2300 datasheet(2/2 Pages) KEXIN

部品番号	SI2300

部品情報	N-Channel Enhancement Mode Field Effect Transistor

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メーカー	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

ホームページ	http://www.kexin.com.cn/index.asp

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SMD Type

IC

SMD Type

MOSFET

KI2300(SI2300)

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

VGS=0V,ID=250uA

20

V

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

1

uA

Gate-Body Leakage

IGSS

VGS=

10V,VDS=0V

100

nA

Gate Threshold Voltage *

VGS(th)

VGS=VDS,ID=250uA

0.6

0.78

1.5

V

VGS=4.5V,ID=5.0A

32

40

m

VGS=2.5V,ID=4.0A

50

60

m

VGS=1.8V,ID=1.0A

62

75

m

On-State Drain Current *

ID(ON)

VDS=5V,VGS=4.5V

18

A

Forward Transconductance *

gFS

VDS=5V,ID=5A

5

S

Input Capacitance

CISS

888

pF

Output Capacitance

COSS

144

pF

Reverse Transfer Capacitance

CRSS

115

pF

Turn-On Delay Time

tD(on)

31.8

ns

Rise Time

tr

14.5

ns

Turn-Off Delay Time

tD(off)

50.3

ns

Fall Time

tf

31.9

ns

Total Gate Charge

Qg

16.8

nC

Gate-S ource Charge

Qgs

2.5

nC

Gate-Drain Charge

Qgd

5.4

nC

Drain-Source Diode Forward Current *

IS

1.25

A

Diode Forward Voltage

VSD

VGS=0V,IS=1.25A

0.825

1.2

V

* Pulse Test:Pulse Width

300

,Duty Cycle

2%

VDS = 10V, ID =3.5A,VGS =4.5V

RDS(ON)

Drain- Source on-state Resistance *

VDD=10V,ID=1A,VGS=4.5V,RL=10

,RGEN=6

VDS = 15V, VGS = 0V,f =1.0MHZ

同様の部品番号 - SI2300

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Shenzhen Jin Yu Semicon...	SI2300	3Mb / 4P	20 V N-Channel Enhancement Mode MOSFET
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同様の説明 - SI2300

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