BF995 datasheet(2/7 Pages) VISHAY

部品番号	BF995

部品情報	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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メーカー	VISHAY [Vishay Siliconix]

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BF995

Vishay Telefunken

www.vishay.de

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Rev. 3, 20-Jan-99

2 (7)

Document Number 85009

Electrical DC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Drain - source

breakdown voltage

ID = 10 mA, –VG1S = –VG2S = 4 V

V(BR)DS

20

V

Gate 1 - source

breakdown voltage

±IG1S = 10 mA, VG2S = VDS = 0

±V(BR)G1SS

8

14

V

Gate 2 - source

breakdown voltage

±IG2S = 10 mA, VG1S = VDS = 0

±V(BR)G2SS

8

14

V

Gate 1 - source

leakage current

±VG1S = 5 V, VG2S = VDS = 0

±IG1SS

100

nA

Gate 2 - source

leakage current

±VG2S = 5 V, VG1S = VDS = 0

±IG2SS

100

nA

Drain current

VDS = 15 V, VG1S = 0, VG2S = 4 V

BF995

IDSS

4

18

mA

DS

G1S

G2S

BF995A

IDSS

4

10.5

mA

BF995B

IDSS

9.5

18

mA

Gate 1 - source

cut-off voltage

VDS = 15 V, VG2S = 4 V, ID = 20 mA

–VG1S(OFF)

3.5

V

Gate 2 - source

cut-off voltage

VDS = 15 V, VG1S = 0, ID = 20 mA

–VG2S(OFF)

3.5

V

Electrical AC Characteristics

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Forward transadmittance

y21s

12

15

mS

Gate 1 input capacitance

Cissg1

3.7

pF

Gate 2 input capacitance

VG1S = 0, VG2S = 4 V

Cissg2

1.6

pF

Feedback capacitance

Crss

25

fF

Output capacitance

Coss

1.6

pF

Power gain

GS = 2 mS, GL = 0.5 mS, f = 200 MHz

Gps

20

dB

AGC range

VG2S = 4 to –2 V, f = 200 MHz

DGps

50

dB

Noise figure

GS = 2 mS, GL = 0.5 mS, f = 200 MHz

F

1.8

2.5

dB

同様の部品番号 - BF995

メーカー	部品番号	データシート	部品情報
Siemens Semiconductor G...	BF995	175Kb / 10P	Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners)

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同様の説明 - BF995

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	BF966S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
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