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MJE5181 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE5181 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJE5180/5181/5182 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT MJE5180 120 MJE5181 140 VCEO(SUS) Collector-Emitter Sustaining Voltage MJE5182 IC= 30mA ;IB= 0 B 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 6A; VCE= 4V 2.0 V MJE5180 VCE= 60V; IB= 0 B 0.7 MJE5181 VCE= 70V; IB= 0 B 0.7 ICEO Collector Cutoff Current MJE5182 VCE= 80V; IB= 0 B 0.7 mA MJE5180 VCE= 120V;VEB= 0 0.4 MJE5181 VCE= 140V;VEB= 0 0.4 ICES Collector Cutoff Current MJE5182 VCE= 160V;VEB= 0 0.4 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 0.3A; VCE= 4V 30 hFE-2 DC Current Gain IC= 3A; VCE= 4V 15 100 fT Current-Gain—Bandwidth Product IC= 0.5A ;VCE= 10V;ftest= 1.0MHz 1.0 MHz isc Website:www.iscsemi.cn 2 |
同様の部品番号 - MJE5181 |
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同様の説明 - MJE5181 |
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