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MJ11016 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited

部品番号 MJ11016
部品情報  isc Silicon NPN Darlington Power Transistor
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
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MJ11016 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website:www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor
MJ11016
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 0.1A; IB= 0
120
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 20A; IB= 0.2A
3.0
V
V CE(sat)-2
Collector-Emitter Saturation Voltage
IC= 30A; IB= 0.3A
4.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 20A; IB= 0.2A
3.5
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 30A; IB= 0.3A
5.0
V
ICER
Collector Cutoff Current
VCE=120V; RBE=1kΩ
VCE=120V; RBE=1kΩ; TC=150℃
1.0
5.0
mA
ICEO
Collector Cutoff Current
VCE= 50V; IB= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5.0
mA
hFE-1
DC Current Gain
IC= 20A, VCE= 5V
1000
hFE-2
DC Current Gain
IC= 30A, VCE= 5V
200


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