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MJ11032 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ11032 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Darlington Power Transistor MJ11032 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11033 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 50 A ICM Collector Current-Peak 100 A IB Base Current-Continunous 2 A PC Collector Power Dissipation @TC=25℃ 300 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -55~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.584 ℃/W |
同様の部品番号 - MJ11032 |
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同様の説明 - MJ11032 |
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