IRF730 datasheet(4/4 Pages) A-POWER

部品番号	IRF730

部品情報	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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メーカー	A-POWER [Advanced Power Electronics Corp.]

ホームページ	http://www.a-power.com.tw

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Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

4/4

IRF730

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

t

T

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

1

10

100

1

10

100

1000

V DS , Drain-to-Source Voltage (V)

T c =25

o C

Single Pulse

1s

100us

1ms

10ms

100m

0

2

4

6

8

10

12

0

10203040

Q G , Total Gate Charge (nC)

I D =3.5A

V DS =80V

V DS =200V

V DS =320V

10

1000

1

5

9

13

17

21

25

29

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

td(on) tr

td(off) tf

VDS

VGS

10%

90%

Q

VG

10V

QGS

QGD

QG

Charge

DC

同様の部品番号 - IRF730

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	IRF730	59Kb / 7P	PowerMOS transistor Avalanche energy rated March 1999 Rev 1.000
New Jersey Semi-Conduct...	IRF730	848Kb / 3P	N-Channel Power MOSFETs, 5.5 A, 350 V/400 V
STMicroelectronics	IRF730	94Kb / 8P	N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET
First Components Intern...	IRF730	100Kb / 3P	6.0A 400V N CHANNEL POWER MOSFET
Fairchild Semiconductor	IRF730	177Kb / 6P	N-Channel Power MOSFETs, 5.5A, 350 V/400V

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同様の説明 - IRF730

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