2N4911 datasheet(2/2 Pages) ISC

部品番号	2N4911

部品情報	Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

2

isc Silicon NPN Power Transistor

2N4911

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA; IB= 0

60

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.1A

0.6

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 1A; IB= 0.1A

1.3

V

VBE(on)

Base-Emitter On Voltage

IC= 1A ; VCE= 1V

1.3

V

ICEX

Collector Cutoff Current

VCE= 60V;VBE(off)= 1.5V

VCE= 60V;VBE(off)= 1.5V;TC=150℃

0.1

1.0

mA

ICEO

Collector Cutoff Current

VCE=30V; IB= 0

0.5

mA

ICBO

Collector Cutoff Current

VCB= 60V; IE= 0

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

mA

hFE-1

DC Current Gain

IC= 50mA ; VCE= 1V

40

hFE-2

DC Current Gain

IC= 500mA ; VCE= 1V

20

100

hFE-3

DC Current Gain

IC= 1A ; VCE= 1V

10

fT

Current-Gain

—Bandwidth Product

IC= 0.25A; VCE= 10V, ftest= 1MHz

3

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 100kHz

100

pF

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