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2N4906 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N4906 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4904 2N4905 2N4906 DESCRIPTION ·With TO-3 package ·Complement to type 2N4913/4914/4915 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N4904 -40 2N4905 -60 VCBO Collector-base voltage 2N4906 Open emitter -80 V 2N4904 -40 2N4905 -60 VCEO Collector-emitter voltage 2N4906 Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A IB Base current -1 A PD Total power dissipation TC=25℃ 87.5 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 2.0 ℃/W Fig.1 simplified outline (TO-3) and symbol |
同様の部品番号 - 2N4906 |
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同様の説明 - 2N4906 |
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