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2SC2358 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC2358 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2358 DESCRIPTION · ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A PT Total power dissipation TC=25℃ 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.17 ℃/W Fig.1 simplified outline (TO-3) and symbol |
同様の部品番号 - 2SC2358 |
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同様の説明 - 2SC2358 |
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