SI4174DY datasheet(3/7 Pages) VISHAY

部品番号	SI4174DY

部品情報	N-Channel 30-V (D-S) MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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3 / 7 page

Document Number: 68998

S-82773-Rev. A, 17-Nov-08

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Vishay Siliconix

Si4174DY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.005

0.007

0.009

0.011

0.013

0.015

0

10203040

50

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

0

2

4

6

8

10

0.0

3.7

7.4

11.1

14.8

18.5

VDS =20 V

ID =10A

VDS =15 V

VDS =10 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

1.6

3.2

4.8

6.4

8.0

0

1

234

5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

0

260

520

780

1040

1300

0

2.4

4.8

7.2

9.6

12

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

ID =10A

VGS =4.5 V

VGS =10 V

TJ -Junction Temperature (°C)

同様の部品番号 - SI4174DY

メーカー	部品番号	データシート	部品情報
Vishay Telefunken	SI4174DY	258Kb / 10P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4174DY	200Kb / 9P	N-Channel 30-V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI4174DY-T1-E3	993Kb / 9P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4174DY-T1-GE3	258Kb / 10P	N-Channel 30-V (D-S) MOSFET Rev. A, 17-Nov-08
Vishay Siliconix	SI4174DY	200Kb / 9P	N-Channel 30-V (D-S) MOSFET 01-Jan-2022

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同様の説明 - SI4174DY

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