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BCW69LT1 データシート(Datasheet) 1 Page - Motorola, Inc

部品番号. BCW69LT1
部品情報  General Purpose Transistors
ダウンロード  8 Pages
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メーカー  MOTOROLA [Motorola, Inc]
ホームページ  http://www.freescale.com
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1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–45
Vdc
Emitter–Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0)
V(BR)CEO
–45
Vdc
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0)
V(BR)CES
–50
Vdc
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
V(BR)EBO
–5.0
Vdc
Collector Cutoff Current
(VCB = –20 Vdc, IE = 0)
(VCB = –20 Vdc, IE = 0, TA = 100°C)
ICBO
–100
–10
nAdc
µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCW69LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BCW69LT1
BCW70LT1
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
© Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER




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