TPS2832, TPS2833

FAST SYNCHRONOUS-BUCK MOSFET DRIVER

WITH DEADTIME CONTROL

SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999

5

POST OFFICE BOX 655303

electrical characteristics over recommended operating virtual junction temperature range,

output drivers

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Hi h id

i k

Duty cycle < 2%,

VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V

0.7

1.1

High-side sink

(see Note 4)

Duty cycle < 2%,

tpw < 100 µs

VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 5 V

1.1

1.5

A

(see Note 4)

(see Note 3)

VBOOT – VBOOTLO = 12 V, VHIGHDR = 10.5 V

2

2.4

High-side

Duty cycle < 2%,

VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5V

1.2

1.4

High side

source

Duty cycle < 2%,

tpw < 100 µs

VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 1.5 V

1.3

1.6

A

Peak output-

(see Note 4)

(see Note 3)

VBOOT – VBOOTLO = 12 V, VHIGHDR = 1.5 V

2.3

2.7

current

Lid

i k

Duty cycle < 2%,

VCC = 4.5 V,

VLOWDR = 4 V

1.3

1.8

Low-side sink

(see Note 4)

Duty cycle < 2%,

tpw < 100 µs

VCC = 6.5 V,

VLOWDR = 5 V

2

2.5

A

(see Note 4)

(see Note 3)

VCC = 12 V,

VLOWDR = 10.5 V

3

3.5

Low-side

Duty cycle < 2%,

VCC = 4.5 V,

VLOWDR = 0.5V

1.4

1.7

Low side

source

Duty cycle < 2%,

tpw < 100 µs

VCC = 6.5 V,

VLOWDR = 1.5 V

2

2.4

A

(see Note 4)

(see Note 3)

VCC = 12 V,

VLOWDR = 1.5 V

2.5

3

VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5 V

5

High-side sink (see Note 4)

VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 0.5 V

5

Ω

VBOOT – VBOOTLO = 12 V, VHIGHDR = 0.5 V

5

VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V

45

High-side source (see Note 4)

VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 6 V

45

Ω

Output

VBOOT – VBOOTLO = 12 V, VHIGHDR =11.5 V

45

resistance

VDRV = 4.5 V,

VLOWDR = 0.5 V

9

Low-side sink (see Note 4)

VDRV = 6.5 V

VLOWDR = 0.5 V

7.5

Ω

VDRV = 12 V,

VLOWDR = 0.5 V

6

VDRV = 4.5 V,

VLOWDR = 4 V

45

Low-side source (see Note 4)

VDRV = 6.5 V,

VLOWDR = 6 V

45

Ω

VDRV = 12 V,

VLOWDR = 11.5 V

45

NOTES:

3. Ensured by design, not production tested.

4. The pull-up/pull-down circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the

combined current from the bipolar and MOSFET transistors. The output resistance is the Rds(on) of the MOSFET transistor when

the voltage on the driver output is less than the saturation voltage of the bipolar transistor.

deadtime

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

LOWDR

High-level input voltage

Over the VCC range (see Note 3)

2

V

LOWDR

Low-level input voltage

Over the VCC range (see Note 3)

1

V

DT

High-level input voltage

Over the VCC range

2

V

DT

Low-level input voltage

Over the VCC range

1

V

NOTE 3: Ensured by design, not production tested.

digital control terminals

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

High-level input voltage

Over the VCC range

2

V

Low-level input voltage

Over the VCC range

1

V