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TPS2836 データシート(PDF) 5 Page - Texas Instruments |
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TPS2836 データシート(HTML) 5 Page - Texas Instruments |
5 / 14 page TPS2836, TPS2837 SYNCHRONOUS-BUCK MOSFET DRIVER WITH DEADTIME CONTROL SLVS224 – NOVEMBER 1999 5 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating virtual junction temperature range, VCC = 6.5 V, CL = 3.3 nF (unless otherwise noted) (continued) output drivers PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Hi h id i k Duty cycle < 2%, VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V 0.7 1.1 High-side sink (see Note 4) Duty cycle < 2%, tpw < 100 µs VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 5 V 1.1 1.5 A (see Note 4) (see Note 3) VBOOT – VBOOTLO = 12 V, VHIGHDR = 10.5 V 2 2.4 High-side Duty cycle < 2%, VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5V 1.2 1.4 High side source Duty cycle < 2%, tpw < 100 µs VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 1.5 V 1.3 1.6 A Peak output- (see Note 4) (see Note 3) VBOOT – VBOOTLO = 12 V, VHIGHDR = 1.5 V 2.3 2.7 current Lid i k Duty cycle < 2%, VCC = 4.5 V, VLOWDR = 4 V 1.3 1.8 Low-side sink (see Note 4) Duty cycle < 2%, tpw < 100 µs VCC = 6.5 V, VLOWDR = 5 V 2 2.5 A (see Note 4) (see Note 3) VCC = 12 V, VLOWDR = 10.5 V 3 3.5 Low-side Duty cycle < 2%, VCC = 4.5 V, VLOWDR = 0.5V 1.4 1.7 Low side source Duty cycle < 2%, tpw < 100 µs VCC = 6.5 V, VLOWDR = 1.5 V 2 2.4 A (see Note 4) (see Note 3) VCC = 12 V, VLOWDR = 1.5 V 2.5 3 VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5 V 5 High-side sink (see Note 4) VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 0.5 V 5 Ω VBOOT – VBOOTLO = 12 V, VHIGHDR = 0.5 V 5 VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V 75 High-side source (see Note 4) VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 6 V 75 Ω Output VBOOT – VBOOTLO = 12 V, VHIGHDR =11.5 V 75 resistance VDRV = 4.5 V, VLOWDR = 0.5 V 9 Low-side sink (see Note 4) VDRV = 6.5 V VLOWDR = 0.5 V 7.5 Ω VDRV = 12 V, VLOWDR = 0.5 V 6 VDRV = 4.5 V, VLOWDR = 4 V 75 Low-side source (see Note 4) VDRV = 6.5 V, VLOWDR = 6 V 75 Ω VDRV = 12 V, VLOWDR = 11.5 V 75 NOTES: 3. Ensured by design, not production tested. 4. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance is the rDS(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. deadtime PARAMETER TEST CONDITIONS MIN TYP MAX UNIT LOWDR High-level input voltage Over the VCC range (see Note 3) 0.7VCC V LOWDR Low-level input voltage Over the VCC range (see Note 3) 1 V DT High-level input voltage Over the VCC range 0.7VCC V DT Low-level input voltage Over the VCC range 1 V NOTE 3: Ensured by design, not production tested. digital control terminals (IN) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT High-level input voltage Over the VCC range 2 V Low-level input voltage Over the VCC range 1 V |
同様の部品番号 - TPS2836 |
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同様の説明 - TPS2836 |
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