データシートサーチシステム |
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BD237 データシート(PDF) 1 Page - Motorola, Inc |
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BD237 データシート(HTML) 1 Page - Motorola, Inc |
1 / 4 page 1 Motorola Bipolar Power Transistor Device Data Plastic Medium Power Silicon NPN Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 100 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current IC 2.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25_C PD 25 Watts Operating and Storage Junction Temperature Range TJ, Tstg – 55 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 5.0 _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) V(BR)CEO 80 — Vdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO — 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 1.0 mAdc DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) hFE1 hFE2 40 25 — — Collector–Emitter Saturation Voltage* (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) — 0.6 Vdc Base–Emitter On Voltage* (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) — 1.3 Vdc Current–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT 3.0 — MHz * Pulse Test: Pulse Width x 300 µs, Duty Cycle x 2.0%. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD237/D © Motorola, Inc. 1995 BD237 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS CASE 77–08 TO–225AA TYPE REV 7 |
同様の部品番号 - BD237 |
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同様の説明 - BD237 |
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