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BD241C データシート(PDF) 1 Page - Motorola, Inc

部品番号 BD241C
部品情報  Complementary Silicon Plastic Power Transistors
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メーカー  MOTOROLA [Motorola, Inc]
ホームページ  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

BD241C データシート(HTML) 1 Page - Motorola, Inc

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Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
• Collector–Emitter Saturation Voltage —
VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B
VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C
• High Current Gain — Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• Compact TO–220 AB Package
MAXIMUM RATINGS
Rating
Symbol
BD241B
BD242B
BD241C
BD242C
Unit
Collector–Emitter Voltage
VCEO
80
100
Vdc
Collector–Emitter Voltage
VCES
90
115
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
3.0
5.0
Adc
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
40
0.32
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
θJA
62.5
_C/W
Thermal Resistance, Junction to Case
R
θJC
3.125
_C/W
40
30
20
10
0
0
20
40
60
80
100
120
140
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD241B/D
© Motorola, Inc. 1995
BD241B
BD241C
BD242B
BD242C
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
40 WATTS
*Motorola Preferred Device
*
*
CASE 221A–06
TO–220AB
NPN
PNP
REV 7


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