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BD244C データシート(PDF) 1 Page - Motorola, Inc

部品番号 BD244C
部品情報  Complementary Silicon Plastic Power Transistors
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メーカー  MOTOROLA [Motorola, Inc]
ホームページ  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

BD244C データシート(HTML) 1 Page - Motorola, Inc

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Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
• Collector – Emitter Saturation Voltage —
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
• Collector Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min) — BD243B, BD244B
VCEO(sus) = 100 Vdc (Min) — BD243C, BD244C
• High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• Compact TO–220 AB Package
MAXIMUM RATINGS
Rating
Symbol
BD243B
BD244B
BD243C
BD244C
Unit
Collector–Emitter Voltage
VCEO
80
100
Vdc
Collector–Base Voltage
VCB
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
6
10
Adc
Base Current
IB
2.0
Adc
Total Device Dissipation
@ TC = 25_C
Derate above 25
_C
PD
65
0.52
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.92
_C/W
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD243B/D
© Motorola, Inc. 1995
BD243B
BD243C
BD244B
BD244C
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80 – 100 VOLTS
65 WATTS
*Motorola Preferred Device
CASE 221A–06
TO–220AB
NPN
PNP
*
*
REV 7


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