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BF199 データシート(PDF) 1 Page - Motorola, Inc |
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BF199 データシート(HTML) 1 Page - Motorola, Inc |
1 / 6 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data RF Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 350 2.8 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.0 8.0 Watts mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 — — Vdc Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 40 — — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO — — 100 nAdc Order this document by BF199/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF199 CASE 29–04, STYLE 21 TO–92 (TO–226AA) 1 2 3 © Motorola, Inc. 1996 COLLECTOR 1 3 BASE 2 EMITTER |
同様の部品番号 - BF199 |
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同様の説明 - BF199 |
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