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UF2810P データシート(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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UF2810P データシート(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 2 page 1 RF Power MOSFET Transistor 10W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant UF2810P • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • Common source configuration • Lower noise floor • 100 MHz to 500 MHz operation ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Rating Drain-Source Voltage 65 Gate-Source Voltage 20 Drain-Source Current 1.4* Power Dissipation 26.9 Junction Temperature 200 Storage Temperature -55 to +150 Thermal Resistance 6.5 Symbol VDS VGS IDS PD TJ TSTG θJC Units V V A W °C °C °C/W ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BVDSS 65 - V VGS = 0.0 V , IDS = 2.0 mA Drain-Source Leakage Current IDSS - 1.0 mA VGS = 28.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 1.0 µA VGS = 20.0 V , VDS = 0.0 V Gate Threshold Voltage VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 10.0 mA Forward Transconductance GM 80 - S VDS = 10.0 V , IDS 100.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 7 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 5 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 2.4 pF VDS = 28.0 V , F = 1.0 MHz Power Gain GP 10 - dB VDD = 28.0 V, IDQ = 100.0 mA, POUT = 50.0 W F =500 MHz Drain Efficiency ŋD 50 - % VDD = 28.0 V, IDQ = 100.0 mA, POUT = 50.0 W F =500 MHz Load Mismatch Tolerance VSWR-T - 20:1 - VDD = 28.0 V, IDQ = 100.0 mA, POUT = 50.0 W F =500 MHz F (MHz) ZIN (Ω) ZLOAD (Ω) 100 30.0-j150.0 70.0+j110.0 300 15.0-j90.0 55.0+j80.0 500 4.2-j46.0 48.0+j50.0 VDD=28V, IDQ=100 Ma, POUT =10.0 W TYPICAL DEVICE IMPEDANCES ZIN is the series equivalent input impedance of the device from gate to gate. ZLOAD is the optimum series equivalent load impedance as measured from drain to drain. *Per side Package Outline |
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同様の説明 - UF2810P |
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