ST7407 datasheet(3/7 Pages) STANSON

部品番号	ST7407

部品情報	P Channel Enhancement Mode MOSFET

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メーカー	STANSON [Stanson Technology]

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ST7407

P Channel Enhancement Mode MOSFET

-3.4A

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST7407 2006. V1

3

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-20

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA -0.35

-0.8

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±

100 nA

VDS=-20V,VGS=0V

-1

Zero Gate Voltage Drain

Current

IDSS

VDS=-20V,VGS=0V

TJ=55℃

-5.0

uA

On-State Drain Current

ID(on)

VDS≦-5V,VGS=-4.5V

VDS≦-5V,VGS=-2.5V

-6

-3

A

Drain-source On-Resistance

RDS(on)

VGS=-4.5V,ID=-3.4A

VGS=-2.5V,ID=-2.4A

VGS=-1.8V,ID=-1.8A

0.090

0.115

0.150

0.100

0.125

0.170

Ω

Forward Transconductance

gfs

VDS=-5V,ID=-2.8V

6.0

S

Diode Forward Voltage

VSD

IS=-1.6A,VGS=0V

-0.8 -1.2

V

Dynamic

Total Gate Charge

Qg

4.8

8.0

Gate-Source Charge

Qgs

1.0

Gate-Drain Charge

Qgd

VDS=-6V

VGS=-4.5V

ID≣-2.8A

1.0

nC

Input Capacitance

Ciss

485

Output Capacitance

Coss

85

Reverse Transfer

Capacitance

Crss

VDS=-6.0V

VGS=0V

F=1MHz

40

pF

10

16

Turn-On Time

td(on)

tr

13

23

18

25

Turn-Off Time

td(off)

tf

VDD=-6V

RL=6Ω

ID=-1.0A

VGEN=-4.5V

RG=6Ω

15

20

nS

同様の部品番号 - ST7407

メーカー	部品番号	データシート	部品情報
Stanson Technology	ST7400	389Kb / 8P	ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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