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STC4516S8RG データシート(PDF) 1 Page - Stanson Technology |
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STC4516S8RG データシート(HTML) 1 Page - Stanson Technology |
1 / 9 page STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURE P Channel -30V/-7.2A, R DS(ON) = 22m-ohm (Typ.) @VGS =-10V -30V/-5.6A, RDS(ON) = 40m-ohm @VGS =-4.5V N Channel 30V/8.5A, R DS(ON) = 10m-ohm @VGS =10V 30V/7.8A, R DS(ON) = 16m-ohm @VGS =4.5V Super high density cell design for extremely low RDS(ON) SOP-8 package design SOP-8 Top View 8 7 6 5 D1 D1 D2 D2 ORDERING INFORMATION 1 2 3 4 S1 G1 S2 G2 STC5416 YA N-Channel MOSFET P-Channel MOSFET Y: Year Code A: Process Code Part Number Package Part Marking STC4516S8RG SOP-8 STC4516 STC4516S8TG SOP-8 STC4516 ※ Process Code : A ~ Z ; a ~ z ※ STC4516S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STC4516S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STC4516 2008 V1 |
同様の部品番号 - STC4516S8RG |
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同様の説明 - STC4516S8RG |
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