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FDS8882 データシート(PDF) 2 Page - Fairchild Semiconductor |
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FDS8882 データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page ©2008 Fairchild Semiconductor Corporation FDS8882 Rev.C www.fairchildsemi.com 2 Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C 4 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.7 3.0 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C -6 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 9 A 13.2 20.0 m Ω VGS = 4.5 V, ID = 8 A 16.6 22.5 VGS = 10 V, ID = 9 A, TJ =125 °C 18.5 28.0 gFS Forward Transconductance VDS = 5 V, ID = 9 A 36 S Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1 MHz 707 940 pF Coss Output Capacitance 138 185 pF Crss Reverse Transfer Capacitance 88 135 pF Rg Gate Resistance 1.8 Ω td(on) Turn-On Delay Time VDD = 15 V, ID = 9 A, VGS = 10 V, RGEN = 6 Ω 714 ns tr Rise Time 310 ns td(off) Turn-Off Delay Time 19 35 ns tf Fall Time 410 ns Qg Total Gate Charge VGS = 0 V to 10 V VDD = 15 V, ID = 9 A 14 20 nC Qg Total Gate Charge VGS = 0 V to 5 V 8 11 nC Qgs Gate to Source Charge 2.2 nC Qgd Gate to Drain “Miller” Charge 2.8 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 9 A 0.8 1.2 V VGS = 0 V, IS = 2.1 A 0.7 1.2 trr Reverse Recovery Time IF = 9 A, di/dt = 100 A/µs 17 31 ns Qrr Reverse Recovery Charge 6 12 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 8 A, VDD = 27 V, VGS = 10 V. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a minimum pad. |
同様の部品番号 - FDS8882 |
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同様の説明 - FDS8882 |
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