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FDS8882 データシート(PDF) 2 Page - Fairchild Semiconductor

部品番号 FDS8882
部品情報  N-Channel PowerTrench짰 MOSFET 30 V, 9 A, 20.0 m廓
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8882 データシート(HTML) 2 Page - Fairchild Semiconductor

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©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
www.fairchildsemi.com
2
Electrical Characteristics T
J = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
30
V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
4
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
1.0
1.7
3.0
V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 µA, referenced to 25 °C
-6
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 9 A
13.2
20.0
m
VGS = 4.5 V, ID = 8 A
16.6
22.5
VGS = 10 V, ID = 9 A, TJ =125 °C
18.5
28.0
gFS
Forward Transconductance
VDS = 5 V, ID = 9 A
36
S
Ciss
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
707
940
pF
Coss
Output Capacitance
138
185
pF
Crss
Reverse Transfer Capacitance
88
135
pF
Rg
Gate Resistance
1.8
td(on)
Turn-On Delay Time
VDD = 15 V, ID = 9 A,
VGS = 10 V, RGEN = 6 Ω
714
ns
tr
Rise Time
310
ns
td(off)
Turn-Off Delay Time
19
35
ns
tf
Fall Time
410
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
VDD = 15 V,
ID = 9 A
14
20
nC
Qg
Total Gate Charge
VGS = 0 V to 5 V
8
11
nC
Qgs
Gate to Source Charge
2.2
nC
Qgd
Gate to Drain “Miller” Charge
2.8
nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 9 A
0.8
1.2
V
VGS = 0 V, IS = 2.1 A
0.7
1.2
trr
Reverse Recovery Time
IF = 9 A, di/dt = 100 A/µs
17
31
ns
Qrr
Reverse Recovery Charge
6
12
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in
2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300
µs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 8 A, VDD = 27 V, VGS = 10 V.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.


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