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TSC80C51-44ID データシート(PDF) 11 Page - TEMIC Semiconductors |
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TSC80C51-44ID データシート(HTML) 11 Page - TEMIC Semiconductors |
11 / 19 page TSC80C31/80C51 Rev. E (14 Jan.97) 11 MATRA MHS Absolute Maximum Ratings* Ambient Temperature Under Bias : M = Military –55 °C to +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature –65 °C to + 150°C . . . . . . . . . . . . . . . . . . . . . . . . Voltage on VCC to VSS –0.5 V to + 7 V . . . . . . . . . . . . . . . . . . . . . . . . Voltage on Any Pin to VSS –0.5 V to VCC + 0.5 V . . . . . . . . . . . . . . . Power Dissipation 1 W** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ** This value is based on the maximum allowable die temperature and the thermal resistance of the package * Notice Stresses at or above those listed under “ Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect device reliability. DC Parameters TA = –55 °C + 125°C ; Vss = 0 V ; Vcc = 5 V ± 10 % ; F = 0 to 40 MHz Symbol Parameter Min Typ (3) Max Unit Test Conditions VIL Input Low Voltage – 0.5 0.2 Vcc – 0.1 V VIH Input High Voltage (Except XTAL and RST) 0.2 Vcc + 0.9 Vcc + 0.5 V VIH1 Input High Voltage (for XTAL and RST) 0.7 Vcc Vcc + 0.5 V VOL Output Low Voltage (Port 1, 2 and 3) (4) 0.45 V IOL = 1.6 mA (2) VOL1 Output Low Voltage (Port 0, ALE, PSEN) (4) 0.45 V IOL = 3.2 mA (2) VOH Output High Voltage (Port 1, 2 and 3) 2.4 V IOH = – 60 µA Vcc = 5 V ± 10 % 0.75 Vcc V IOH = – 25 µA 0.9 Vcc V IOH = – 10 µA VOH1 Output High Voltage (Port 0 in External Bus Mode, ALE, PEN) 2.4 V IOH = – 400 µA Vcc = 5 V ± 10 % 0.75 Vcc V IOH = – 150 µA 0.9 Vcc V IOH = – 40 µA IIL Logical 0 Input Current (Ports 1, 2 and 3) – 75 µA Vin = 0.45 V ILI Input leakage Current +/– 10 µA 0.45 < Vin < Vcc ITL Logical 1 to 0 Transition Current (Ports 1, 2 and 3) – 750 µA Vin = 2.0 V IPD Power Down Current 5 75 µA Vcc = 2.0 V to 5.5 V (1) RRST RST Pulldown Resistor 50 90 200 K Ω CIO Capacitance of I/O Buffer 10 pF fc = 1 MHz, Ta = 25 _C ICC Power Supply Current Freq = 1 MHz Icc op Icc idle Freq = 6 MHz Icc op Icc idle Freq ≥ 12 MHz Icc op max = 0.9 Freq (MHz) + 5 0.7 0.5 4.2 1.4 1.8 1 9 3.5 mA mA mA mA mA Vcc = 5.5 V Freq ≥ 12 MHz Icc op max = 0.9 Freq (MHz) + 5 Icc idle max = 0.3 Freq (MHz) + 1.7 Freq ≤ 20 MHz Icc op typ = 0.7 Freq (MHz) Freq ≥ 20 MHz Icc op typ = 0.5 Freq (MHz) + 4 Freq ≤ 20 MHz Icc idle typ = 0.16 Freq (MHz) + 0.4 Freq ≥ 20 MHz Icc idle typ = 0.12 Freq (MHz) + 1.2 mA mA mA mA mA mA |
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