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2SJ74 データシート(Datasheet) 1 Page - Toshiba Semiconductor

部品番号. 2SJ74
部品情報  P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
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2SJ74
2003-03-25
1
TOSHIBA Field Effect Transistor
Silicon P Channel Junction Type
2SJ74
Low Noise Audio Amplifier Applications
· Recommended for first stages of EQ amplifiers and M.C. head
amplifiers.
· High |Yfs|: |Yfs| = 22 mS (typ.)
(VDS = −10 V, VGS = 0, IDSS = −3 mA)
· Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = −10 V, ID = −1 mA, f = 1 kHz)
· High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
· Complimentary to 2SK170
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
25
V
Gate current
IG
-10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 25 V, VDS = 0
¾
¾
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 mA
25
¾
¾
V
Drain current
IDSS
(Note)
VDS = -10 V, VGS = 0
-2.6
¾
-20
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = -10 V, ID = -0.1 mA
0.15
¾
2.0
V
Forward transfer admittance
ïYfsï
VDS = -10 V, VGS = 0, f = 1 kHz
8
22
¾
mS
Input capacitance
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
¾
105
¾
pF
Reverse transfer capacitance
Crss
VDG = -10 V, ID = 0, f = 1 MHz
¾
32
¾
pF
NF (1)
VDS = -10 V, ID = -1 mA, RG = 1 kW,
f
= 10 Hz
¾
1.0
10
Noise figure
NG (2)
VDS = -10 V, ID = -1 mA, RG = 1 kW,
f
= 1 kHz
¾
0.5
2
dB
Note: IDSS classification GR: -2.6~-6.5 mA, BL: -6.0~-12 mA, V: -10~-20 mA
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)




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