TPC6601 datasheet(2/5 Pages) TOSHIBA

部品番号	TPC6601

部品情報	Transistor Silicon PNP Epitaxial Type

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

TPC6601

2006-11-10

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −50 V, IE = 0

⎯

−100

nA

Emitter cut-off current

IEBO

VEB = −7 V, IC = 0

⎯

−100

nA

Collector-emitter breakdown voltage

V (BR) CEO

IC = −10 mA, IB = 0

−50

⎯

V

hFE (1)

VCE = −2 V, IC = −0.3 A

200

⎯

500

DC current gain

hFE (2)

VCE = −2 V, IC = −1.0 A

100

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = −1.0 A, IB = −33 mA

⎯

−0.2

V

Base-emitter saturation voltage

VBE (sat)

IC = −1.0 A, IB = −33 mA

⎯

−1.1

V

Rise time

tr

⎯

60

⎯

Storage time

tstg

⎯

250

⎯

Switching time

Fall time

tf

See Figure 1 circuit diagram.

VCC ∼− −30 V, RL = 30 Ω

IB1 = −IB2 = −33 mA

⎯

90

⎯

ns

Figure 1 Switching Time Test Circuit & Timing Chart

Circuit Configuration

Marking

6

1

2

3

5

4

IB2

IB1

20

μs

Output

Input

IB2

IB1

VCC

Duty cycle

< 1%

Part No.

(or abbreviation code)

H3A

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Lot code (month)

Lot No.

Pin #1

Lot code

(year)

Product-specific code

同様の部品番号 - TPC6601

メーカー	部品番号	データシート	部品情報
Toshiba Semiconductor	TPC6601	1Mb / 73P	Bipolar Small-Signal Transistors

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