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TPC8039-H データシート(PDF) 3 Page - Toshiba Semiconductor |
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TPC8039-H データシート(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPC8039-H 2008-09-16 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 0.5 mA 1.3 ⎯ 2.3 V VGS = 4.5 V, ID = 8.5 A ⎯ 4.9 6.9 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 8.5 A ⎯ 4.1 6.0 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 8.5 A 30 60 ⎯ S Input capacitance Ciss ⎯ 2600 3400 Reverse transfer capacitance Crss ⎯ 170 270 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 490 ⎯ pF Gate resistance rg VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 1.0 1.5 Ω Rise time tr ⎯ 3.5 ⎯ Turn-on time ton ⎯ 11 ⎯ Fall time tf ⎯ 7.3 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 41 ⎯ ns VDD ≈ 24 V, VGS = 10 V, ID = 17 A ⎯ 36 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ≈ 24 V, VGS = 5 V, ID = 17 A ⎯ 18 ⎯ Gate-source charge 1 Qgs1 ⎯ 7.6 ⎯ Gate-drain (“miller”) charge Qgd ⎯ 4.8 ⎯ Gate switch charge QSW VDD ≈ 24 V, VGS = 10 V, ID = 17 A ⎯ 8.5 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 68 A Forward voltage (diode) VDSF IDR = 17 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ≈ 15 V 0 V VGS 10 V ID = 8.5 A VOUT |
同様の部品番号 - TPC8039-H |
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同様の説明 - TPC8039-H |
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