ADF4602BCPZ-RL datasheet(9/36 Pages) AD

部品番号	ADF4602BCPZ-RL

部品情報	Single-Chip, Multiband 3G Femtocell Transceiver

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メーカー	AD [Analog Devices]

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ADF4602

Rev. 0 | Page 9 of 36

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter

Rating

VDD to GND

−0.3 V to +4 V

VSUP1, VSUP2 to GND

−0.3 V to +3.6 V

VSUP4, VSUP5, VSUP6, VSUP7,

VSUP8, VSUP9 to GND

−0.3 V to +3.6 V

VSUP3 to GND

−0.3 V to +2.0 V

VINT to GND

−0.3 V to +2.0 V

Analog I/O Voltage to GND

−0.3 V to VDD + 0.3 V

Digital I/O Voltage to GND

−0.3 V to VDD + 0.3 V

Operating Temperature Range

Commercial (B Version)

0°C to +85°C

Storage Temperature Range

−65°C to +125°C

Maximum Junction Temperature

150°C

LFCSP θJA Thermal Impedance

32°C/W

Reflow Soldering

Peak Temperature

240°C

Time at Peak Temperature

40 sec

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

This device is a high performance RF integrated circuit with an

ESD rating of <2 kV, and it is ESD sensitive. Proper precautions

should be taken for handling and assembly.

ESD CAUTION

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