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IXZR18N50 データシート(PDF) 2 Page - IXYS Corporation

部品番号 IXZR18N50
部品情報  Z-MOS RF Power MOSFET
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メーカー  IXYS [IXYS Corporation]
ホームページ  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXZR18N50 データシート(HTML) 2 Page - IXYS Corporation

  IXZR18N50 Datasheet HTML 1Page - IXYS Corporation IXZR18N50 Datasheet HTML 2Page - IXYS Corporation IXZR18N50 Datasheet HTML 3Page - IXYS Corporation IXZR18N50 Datasheet HTML 4Page - IXYS Corporation  
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IXZR18N50 & IXZR18N50A/B
Z-MOS RF Power MOSFET
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
IS
VGS = 0 V
19
Α
ISM
Repetitive; pulse width limited by TJM
114
A
VSD
IF = Is, VGS=0 V, Pulse test, t ≤ 300 s, duty cycle
≤2%
1.5
V
Trr
200
ns
Source-Drain Diode
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
6,404,065
6,583,505
6,710,463
6,727,585
6,731,002
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
RG
1
Ciss
2020
pF
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
172
pF
Crss
21
pF
Td(on)
4
ns
Ton
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 1 Ω (External)
4
ns
Td(off)
4
ns
Toff
5
ns
Qg(on)
42
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25 IG = 3mA
14
nC
Qgd
21
nC
Cstray
Back Metal to any Pin
33
pF


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