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BC639RL1G データシート(PDF) 2 Page - ON Semiconductor

部品番号 BC639RL1G
部品情報  High Current Transistors
Download  4 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC639RL1G データシート(HTML) 2 Page - ON Semiconductor

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BC637, BC639, BC639−16
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
BC637
BC639
V(BR)CEO
60
80
Vdc
Collector − Emitter Zero−Gate Breakdown Voltage(Note 1)
(IC = 100 mAdc, IB = 0)
BC639−16
V(BR)CES
120
Vdc
Collector − Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
BC637
BC639
V(BR)CBO
60
80
Vdc
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
ICBO
100
10
nAdc
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)
BC637
BC639
BC639−16ZLT1
(IC = 500 mA, VCE = 2.0 V)
hFE
25
40
40
100
25
160
160
250
Collector − Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.5
Vdc
Base − Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
fT
200
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
7.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
50
pF
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device
Package
Shipping
BC637G
TO−92
(Pb−Free)
5000 Units / Bulk
BC639G
TO−92
(Pb−Free)
5000 Units / Bulk
BC639RL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
BC639ZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
BC639−16ZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.


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