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MMBTH10M3T5G データシート(PDF) 1 Page - ON Semiconductor |
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MMBTH10M3T5G データシート(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2009 January, 2009 − Rev. 0 1 Publication Order Number: MMBTH10M3/D MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • Reduces Board Space • This is a Halide−Free Device • This is a Pb−Free Device MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 25 Vdc Collector−Base Voltage VCBO 30 Vdc Emitter−Base Voltage VEBO 3.0 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 265 2.1 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 470 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 640 5.1 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 195 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com Device Package Shipping† ORDERING INFORMATION MMBTH10M3T5G SOT−723 (Pb−Free) 8000/Tape & Reel COLLECTOR 3 1 BASE 2 EMITTER †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SOT−723 CASE 631AA STYLE 1 1 2 3 AJ M AJ = Specific Device Code M = Date Code MARKING DIAGRAM |
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