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2N2647 データシート(PDF) 1 Page - Comset Semiconductor |
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2N2647 データシート(HTML) 1 Page - Comset Semiconductor |
1 / 3 page 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required and also for triggering high power SCR’s. ABSOLUTE MAXIMUM RATINGS Tj=125°C unless otherwise noted Symbol Ratings 2N2646 2N2647 Unit VB2E Emitter-Base2 Voltage 30 V Ie RMS Emitter Current 50 mA ie Peak Pulse Emitter Current * 2 A VB2B1 Interbase Voltage 35 V PD RMS power Dissipation 300 mW TJ Junction Temperature -65 to +125 °C TStg Storage Temperature -65 to +150 °C Capacitor discharge – 10µF or less, 30volts or less. |
同様の部品番号 - 2N2647 |
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同様の説明 - 2N2647 |
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