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CDBQR0130R-HF データシート(PDF) 1 Page - Comchip Technology |
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CDBQR0130R-HF データシート(HTML) 1 Page - Comchip Technology |
1 / 4 page Io = 100 mA VR = 30 Volts CDBQR0130R-HF SMD Schottky Barrier Diode Page 1 REV:C SMD Diodes Specialist A mA V V 1 100 30 35 IO VR VRRM IFSM 8.3ms single half sine-wave superimposed on rate load(JEDEC method) OC OC +125 +125 -40 TSTG Tj Storage temperature Junction temperature Average forward current Reverse voltage Repetitive peak reverse voltage Forward current,surge peak Parameter Conditions Symbol Min Typ Max Unit O Maximum Rating (at TA=25 C unless otherwise noted) O Electrical Characteristics (at TA=25 C unless otherwise noted) Features Halogen free. Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 0402(1005) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BQ Mounting position: Any. Weight: 0.001 gram(approx.). Comchip Technology CO., LTD. (RoHS Device) mW 125 PD Power Dissipation QW-G1099 uA V 0.5 0.45 IR VF Reverse current Forward voltage Parameter Conditions Symbol Min Typ Max Unit VR = 10 V IF = 10 mA 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) 0402(1005) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.022(0.55) 0.018(0.45) 0.012(0.30) Typ. |
同様の部品番号 - CDBQR0130R-HF |
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同様の説明 - CDBQR0130R-HF |
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