データシートサーチシステム |
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TGF1350 データシート(PDF) 4 Page - TriQuint Semiconductor |
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TGF1350 データシート(HTML) 4 Page - TriQuint Semiconductor |
4 / 5 page TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet 4 RF CHARACTERISTICS DC CHARACTERISTICS V DS = 3 V, IDS = 15mA, TA = 25 O C TA = 25OC *V DSS = VDS @ IDSS **V DS for IDSS is the drain voltage between 0.5V and 3.5V at which drain current is highest. EQUIVALENT SCHEMATIC PARAMETER TEST CONDITIONS TYP UNIT NFMIN Min im u m n o is e fig u re 1 0 GHz 1 .5 1 8 GHz 2 .5 d B GA As s o ciated g ain 1 0 GHz 1 1 1 8 GHz 7 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)GDO Gate–d rain breakdown vo ltag e IGS = 1.0m A per m m - 6 V V(BR)GSO Gate–s ource breakdown vo ltag e IGD = 1.0m A per m m - 6 V VGS(OFF) Gate–s o u rce cu to ff (p in ch –o ff) VDS = VDSS* - 0.5 - 1.2 - 3 V vo ltag e I D = 0.5m A per m m IDSS Zero –g ate–vo ltag e d rain cu rren t VDS = 0.5 V to 3.5V** 30 50 100 m A at s atu ratio n VGS = 0 GM DC tran s conductance VDS = 0.5 V to VDSS* 40 50 78 m A VGS = - 0.25V TGF1350-SCC |
同様の部品番号 - TGF1350 |
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同様の説明 - TGF1350 |
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