TS16GUSDHC6 datasheet(4/26 Pages) TRANSCEND

部品番号	TS16GUSDHC6

部品情報	16GB High Capacity microSD Card

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SD

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HC

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16GB High Capacity microSD Card

Transcend Information Inc.

4

Bus Operating Conditions

• General

Parameter

Symbol

Min.

Max.

Unit

Remark

Peak voltage on all lines

-0.3

VDD+0.3

V

All Inputs

Input Leakage Current

-10

10

µA

All Outputs

Output Leakage Current

-10

10

µA

• Power Supply Voltage

Parameter

Symbol

Min.

Max.

Unit

Remark

Supply voltage

VDD

2.7

3.6

V

Output High Voltage

VOH

0.75* VDD

V

IOH=-100uA@VDD Min.

Output Low Voltage

VOL

0.125* VDD

V

IOL=100uA@VDD Min.

Input High Voltage

VIH

0.625* VDD VDD+0.3

V

Input Low Voltage

VIL

VSS-0.3

0.25* VDD

V

Power up time

250

ms

From 0v to VDD Min.

• Current Consumption

The current consumption is measured by averaging over 1 second.

‧

Before first command: Maximum 15 mA

‧

During initialization: Maximum 100 mA

‧

Operation in Default Mode: Maximum 100 mA

‧

Operation in High Speed Mode: Maximum 200 mA

‧

Operation with other functions: Maximum 500 mA.

• Bus Signal Line Load

The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus

capacitance CBUS itself and the capacitance CCARD of each card connected to this line:

CL = CHOST + CBUS + Ν*CCARD

Where N is the number of connected cards.

Parameter

Symbol

Min.

Max.

Unit

Remark

Pull-up resistance

RCMD

RDAT

10

100

k

Ω

To prevent bus floating

Bus signal line capacitance

CL

40

pF

1 card

CHOST+CBUS shall not exceed

30 pF

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