データシートサーチシステム |
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BTB772SA3 データシート(PDF) 1 Page - Cystech Electonics Corp. |
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BTB772SA3 データシート(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C817A3-R Issued Date : 2003.05.31 Revised Date:2006.05.15 Page:1/4 BTB772SA3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Complementary to BTD882SA3 • Pb-free package Symbol Outline BTB772SA3 TO-92 Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V IC(DC) -3 A Collector Current IC(pulse) -7 (Note) A Power Dissipation Pd 750 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : Single Pulse Pw≦350 μs, Duty≦2%. E C B B:Base C:Collector E:Emitter |
同様の部品番号 - BTB772SA3_06 |
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同様の説明 - BTB772SA3_06 |
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