データシートサーチシステム |
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BTB1188M3 データシート(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1188M3 データシート(HTML) 1 Page - Cystech Electonics Corp. |
1 / 5 page CYStech Electronics Corp. Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : 2006.02.15 Page No. : 1/5 BTB1188M3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB1188M3 Features • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics • Complementary to BTD1766M3 • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -2 A Collector Current (Pulse) ICP -5 (Note 1) A Power Dissipation Pd 0.5 W Power Dissipation Pd 2 (Note 2) W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw=10ms 2. When mounting on a 40 ×40 ×0.7 mm ceramic board. BTB1188M3 SOT-89 B:Base C:Collector E:Emitter B C E |
同様の部品番号 - BTB1188M3 |
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同様の説明 - BTB1188M3 |
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