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BAS116RF データシート(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BAS116RF データシート(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page BAS116 225mW SMD Switching Diode Small Signal Diode Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Min Max Min Max Case : SOT- 23 small outline plastic package 1.50 1.70 0.059 0.067 3.55 3.85 0.140 0.152 0.45 0.65 0.018 0.026 2.60 2.80 0.102 0.11 1.05 1.25 0.041 0.049 0.08 0.15 0.003 0.006 Package SOT-23 Maximum Ratings Electrical Characteristics Reverse Breakdown Voltage IR= 100µA IF= 1.0mA IF= 10mA IF= 50mA IF= 150mA Reverse Leakage Current VR= 75V Junction Capacitance VR=0, f=1.0MHz Reverse Recovery Time (Note 2) Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=10mA, RL=100Ω, IRR=1mA V 1.25 5 2.0 3.0 - 0.9 1.0 1.1 - - - - 75 - - - A Min Max Trr IR CJ °C 500 330 -55 to + 150 mA °C/W Units Forward Voltage VF High temperature soldering guaranteed: 260°C/10s Junction and Storage Temperature Range Thermal Resistance (Junction to Ambient) (Note 1) RθJA TJ, TSTG Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed Mean Forward Current Io D E G Rating at 25°C ambient temperature unless otherwise specified. 0.50 REF 0.02 REF Features Mechanical Data Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C Unit (mm) Units F Unit (inch) Dimensions B Value Non-Repetitive Peak Forward Surge Current @ t= 1.0s IFSM VRRM Symbol Type Number Weight : 0.008gram (approximately) Maximum Ratings and Electrical Characteristics Power Dissipation PD mW 200 225 V mA Part No. Packing BAS116 RF 3Kpcs/7" Reel Ordering Information SOT-23 Type Number Symbol Low power loss, high current capability, low VF V(BR) Repetitive Peak Reverse Voltage 75 V nA pF ns B A C D G F E Version : B09 |
同様の部品番号 - BAS116RF |
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同様の説明 - BAS116RF |
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