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TSC5401CTA3 データシート(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSC5401CTA3 データシート(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 4 page Preliminary TSC5401 Very High Voltage NPN Transistor 2/4 Version: Preliminary Electrical Specifications (Ta = 25ºC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 1500 -- -- V Collector-Emitter Breakdown Voltage IC =5mA, IE =0 BVCEO 700 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO 7 -- -- V Collector Cutoff Current VCE =700V, IB=0 ICEO -- -- 10 uA Collector Cutoff Current VCB =1300V, IE =0 ICBO -- -- 1 mA Emitter Cutoff Current VEB = 7V, IC =0 IEBO -- -- 10 uA Collector-Emitter Saturation Voltage IC=0.2A, IB =0.04A VCE(SAT)1 --- -- 0.3 V Collector-Emitter Saturation Voltage IC=0.5A, IB =0.1A VCE(SAT)2 --- -- 1.0 V Base-Emitter Saturation Voltage IC=0.5A, IB =0.1A VBE(SAT) -- -- 1.2 V DC Current Gain VCE =5V, IC =10mA VCE =5V, IC = 500mA VCE =5V, IC = 1A hFE 20 5 2 -- -- -- 45 -- Dynamic Resistive Load Switching Time (Ratings) Rise Time tr 0.4 0.8 uS Storage Time tSTG -- 1.5 3 uS Fall Time VCC =400V, IC =0.5A, IB1=0.1, IB2=-0.2A, tP =25uS tf -- 0.25 0.4 uS Note: pulse test: pulse width ≤300uS, duty cycle ≤2% |
同様の部品番号 - TSC5401CTA3 |
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同様の説明 - TSC5401CTA3 |
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